Keyword Index of MRS Internet Journal of Nitride Semiconductor Research

0 (1 items): 00.1) sapphire,
2 (1 items): 2DEG,
3 (2 items): 3rd order grating, 3x3,
6 (3 items): 6H-SiC, 6H-SiC substrate,
A (113 items): A^IIIB^V nitrides, absorption, absorption coefficient, acceptor, activation, activation energy, activation of acceptors, active nitrogen, adatom, adducts, AFM, AlBN, ALE, AlGaInN, AlGaN, AlGaN alloy, AlGaN epitaxy, AlGaN ternary alloys, AlGaN/GaN HFET, alloy, alloy., alloys, AlN, AlN)_x(SiC)_1-x, aluminum gallium nitride (AlGaN), aluminum nitride, Aluminum nitrides, Ambient gas, ammonia, ammonia cracking, ammonia decomposition, and annealing., and related materials, anisotropy, anneal, annealing, anomalous, anti-surfactant, Ar and Xe), armchair, arsenide-nitrides, atomic, atomic force, atomic force microscopy, Auger, Auger Electron Spectroscopy, AZ400K solution,
B (49 items): background impurity, band gap, band gap energy, band structure, band tails, bandgap bowing, barrier, Base Transit Time, BBr₃, behavior of hydrogen, bending, beryllium, BGaN, BI₃, biaxial stress, binary alloys, bipolar transistor, birefringence, bis(cyclopentadienyl)magnesium, BJT, blue, Blue LEDs, boron contamination, bowing, Bragg reflector, breakdown, buffer, buffer layer, buffer layers, bulk, bulk crystal, bulk crystal growth, Bulk crystals, Bulk GaN Substrates,
C (72 items): c-BN, c-GaN, c-InGaN, C-V, CAICISS, camera, carbides, carbon, Carbon contamination, carbon doping, carrier confinement, Carrier Dynamics, carriers, cathodoluminescence, CBED, characteristic temperature, characterization, chemical treatment, chemical vapor deposition, CL, Cl2-based chemistries, Cl2/Ar discharges, co-doping, coalescence, compensation, complex-coupled, complexe, composition, composition pulling effect, compositional fluctuations, COMPOSITIONAL INHOMOGENEITY, computational materials science; GaN transport; hot electrons, computer simulation, conductivity, confined exciton, Contact Resistance, contacts, crack, critical, cryogenic, cryogenic treatment, crystal, Crystal growth, Crystal morphology, crystal structure, crystallization, crystallographic, cubic, cubic boron nitride, cubic GaN, Cubic phase, current, CW,
D (99 items): damage, DBR, decomposition in ammonia, decrease., deep centers, deep levels, deep levels., deep states, defect, Defect Annealing, defect density, defects, defects filtering, deformation potential, degradation, delta-doping, density, desorption rate, detector array, detectors, device, device fabrication, device performance, devices, DFB laser, dielectric functions, diffraction, diffraction., diffractometry, diffusion, diffusion-limited, diode, diodes., dislocation, dislocations, disorder, displays, dissociation, distributed Bragg reflectors, DLTFS, DLTS, domains, donor-acceptor pair, donors, doped superlattice, doping, doping., double-heterostructure, DX center,
E (125 items): ECR, edge energy, edge termination, EELS, effect, effective bandgap inhomogeneity, effective mass, efficiency, Elastic Constants, Temperature Dependence, Corresponding States, elective etching, electric field, electric field in quantum wells, Electrical, electrical properties, electrically injected, electroluminescence, electron beam pumped laser, electron beam pumping, Electron cyclotron resonance, electron microscopy, electron overflow, electron-irradiation, electronic Raman scattering, electronic structure, electroreflection, ellipsometry, ELO, ELOG, emission, emitting diodes, enthalpy, entropy, EPD, Epilayers, epitaxial lateral overgrowth, epitaxial lateral overgrowth (see lateral epitaxial growth), epitaxial overgrowth, Epitaxial ZnO, epitaxy, EPVOM, Er, Erbium, ESR, etch selectivity, etching, etching damage, etching fundamentals, evaporation coefficient, exciton, exciton and carrier dynamics, excitonic recombination, excitons, expansion, extended, extended defects, extra,
F (31 items): facet, faults, ferroelectrics, FET, field, field effect transistor, films, Finite element model, First Principles, Flicker noise, fluctuations, Focused Ion Beam, focused ion beam etching, force microscopy, formation mechanism, four wave mixing, four-wave mixing, Franz-Keldysh effect, free, free carriers, free evaporation, free excitons,
G (125 items): g-factors, Ga, Ga desorption, Ga droplet formation, GaAsN, GaAsN quantum wells, gain, GaInN, GaInNAs, gallium nitride (GaN), gallium nitride or GaN, Gallium Nitrides, GaN and InN, GaN carbon PL photoluminescence PLE excitation yellow red gallium nitride, GaN decomposition, GaN defect structure, GaN doping p-type defects, GaN pyramids, GaN synthesis, GaN(0001), GaN, biexciton, electron-hole-plasma, high-excitation, gain, GaN, MOCVD, capillary epitaxy, GaN, Molecular Beam Epitaxy, GaN-AlN-superlattice, GaN/AlGaN, GaN/AlGaN MQWs, GaN/AlGaN QWs, GaN:Mg, GaNAs, GaNP, gas chromatography-mass spectroscopy, GCMS, Grain size, group III-nitrides, group-III nitrides, growth, growth chemistry, Growth defects, growth kinetics, growth mechanisms, Growth Mode and, growth rate, GSMBE,
H (72 items): Hall, Hall-effect, hardness, harmonic generation, HBT, He-ion, heat flow, HEMT, HEMTs, heteroepitaxy, Heterojunction Bipolar Transistor, heterostructure, heterostructures, hexagonal, HFET, high density plasma damage, High Electron Mobility Transistor, high excitation, high pressure crystal growth, high pressure growth, high pressure solution growth, high-performance, high-speed, high-temperature processing, higher temperature device operation, hole injection, holograhpy, homoepitaxy, HREM, HRTEM, HVPE, hydride vapor phase epitaxy, hydrogen, hydrostatic pressure, Hyperfine,
I (111 items): ICP etching, III nitrides, III-Nitrides, III-V, III-V nitrides, III-V semiconductors, III/V flux ratio, imaging, Implantation, impurities, impurity analysis, In composition, in p-GaN, In-Situ RBS/Channeling, incorporation., indium, indium fluctuations, INDIUM GALLIUM NITRIDE, indium incorporation, indium nitride, induce absorption, induced emission shift, inductively coupled plasma, Inductively Coupled Plasma etching, influence of the additive gas (He, infrared, infrared emission, InGaAlN, InGaN, InGaN laser, InGaN/GaN LD, InGaN/GaN quantum wells, ingot, injection, InN, interaction, interband, Interface Effects, interface reactions, interfacial reaction, interference, intermediate-temperature buffer layer, intermixing, internal strain, inversion domain boundaries, inversion domains, ion channeling, ion implantation, ion-implantation, isolation,
J (1 items): JFET,
K (2 items): KEYWORDS: GaN, KOH,
L (86 items): Laser, laser diode, laser diodes, laser gain, lasers, lasing, lateral, lateral epitaxial growth, lateral epitaxial overgrowth, lateral epitaxy, LATERAL OVERGROWTH, lattice location, lattice mismatch, lattice relaxation, LE4, leak, leakage, LED, LEDs, LEED, level(s), levels, LiAlO₂, lifetimes, light emission, Light Emitting Diodes, light-emitting diodes, liquid phase., local vibration, Local Vibrational Modes, localization of carriers, localized epitaxy, localized exciton, localized state, losses, low frequency noise, low pressure MOCVD, Low temperature interlayer, Low temperature nitridation, LT-AlN interlayer, luminescence, Luminescence., luminescent activation,
M (188 items): Magnesium, magnesium doping, magnetic fields, magnetooptics, management., mapping, mass transport, matrix method, MBE, measurements, mechanical stability, mechanisms, melt growth, MESFETs, METAL CONTACT, metal contacts, metal-semiconductor contact, Metal-semiconductor interfaces, metallorganic vapor phase epitaxy (MOVPE), metalorganic, metalorganic chemical, metalorganic chemical vapor deposition, metalorganic vapor phase epitaxy, Metastable States, MFS, Mg, Mg doping, Mg doped GaN, Mg doping, Mg precursors, MgCp2, MgO, micro-PL, microcavity, microdistortion dislocations, micromachining, microscopy, microscopy., microstructure, microstructures, MIS devices, miscibility gap, misfit, misorientated substrates, misorientation, misregistry, mobility, MOCVD, MOCVD-grown, model, modeling, MODFET, MODFETs, modulation doping, mole fraction., molecular beam epitaxy, Monte Carlo, Monte Carlo methods, montecarlo, morphology, MOSFET, MOVPE, MOVPE growth, MQW, MQW structure, MQWs, multi-quantum well, multi-quantum wells, multi-quantum-well, multiple quantum well, multiwafer, multiwafer reactor,
N (38 items): N, n-GaN, n-type doping, n-type GaN, nanotubes, NAOH, NaOH etching, native point defects, NBE, negative differential conductance, new plasma chemistry, NIIN, nitridation, nitridation of GaAs, nitridation of sapphire, nitride lasers, NITRIDE MBE, nitride semiconductors, nitrides and luminescence., Nitrogen, nitrogen incorporation, nitrogen metastables, Nitrogen-deficient GaN, noise, noise power density, non-polar, Non-stationary Transport, nonlinear optics, nonlinear properties, nucleation,
O (39 items): ODENDOR, ODMR, offsets, OHMIC CONTACT, OMVPE, optical, OPTICAL ABSORPTION, Optical Anisotropy, optical gain, Optical Modulator, optical properties, optical pumping, Optical Quenching, optical spectroscopy, optically-detected-magnetic-resonance, Optoelectronics, ordering, OSC, overgrowth, overgrowth epitaxy, oxidation, oxygen,
P (153 items): p-n junction, p-type doping, p-type GaN, PAC, parameter, peak reflectance, PEC etching, Peierls force, PEMBE, pendeo-epitaxy, persistent photoconductivity, PHASE SEPARATION, phonons, phosphor, photo-assisted, Photo-assisted RIE (PA-RIE), photoconductivity, photoconductors, photodetectors, photodetectors., photodiode array, photodiode model, photodiodes, photoelectrochemical, photoelectrochemical etching of InxGa1-xN, photoemission, photoluminescence, PHOTOLUMINESCENCE EXCITATION, photonic, Photoreflectance, photoreflection, photothermal deflection spectroscopy, Physics-based modeling, picosecond time-resolved PL, Piezoelectric, piezoelectric effect, piezoelectric effects, piezoelectric field, piezoelectric polarization, Piezoelectricity., pinholes, PL, planetary, Planetary Reactor, plasma, Plasma damage, plasma etch, plasma etching, plasma-assisted molecular beam epitaxy, platelets, PLD, PLE, pn, point defects, Poissonrsquo, polariton laser, polarity, polarization, polynomial approximation, porous, precursor purification, precursor purity, precursors, pressure, prism coupling, property, proton, pseudomorphic strain, pseudopotential, pulsed, pulsed laser deposition, pyramids, PZT,
Q (26 items): QD, quamtum-dots, quantum confinement., quantum dot, quantum dots., quantum well, quantum wells, QW, QWs,
R (66 items): r-plane sapphire, radiation, Radiation Effects, radiation., radiative lifetime, radiative recombination, Raman, Raman mapping, Raman scattering, RAMAN SPECTROSCOPY, Raman spectroscopy,AlGaN,solid solutions,disorder effects,coupling of oscillators., rapid thermal processing, rare earth, Rare Earth doping, rare-earth, RBS, reactive ion etching, real-space transfer, recoiled ions., recombination, reconstruction, reconstructions, rectifiers, Red, red emission, redistribution, reflectance, reflection high energy electron diffraction, reflectivity, refractive index, Remote Plasma-MOCVD, residual donor, residual hydrogen, Residual stress, resistance contacts, resonance, resonant-cavity-enhanced, responsivity, RF, rf plasma MBE, rf-plasma, RHEED, RIE polishing, room temperature, Rutherford backscattering,
S (203 items): s ratio, S-K growth mode, SAE, SAG, sapphire, sapphire substrate, satellites, SAW, scanning, scanning electron, scanning tunneling microscopy, scattering, Schottky, Schottky barrier, Schottky barrier diodes, Schottky contact, Schottky diode rectifier, Schottky diodes, Schottky photodiode, screening, seeded growth, segregation, selective area, selective area epitaxy, selective area growth, selective growth, self-assembling formation, self-heating, self-heating effect, selfcompensation, SEM, Semi-insulating GaN, semiconductor, Semiconductor alloys, semiconductor heterostructures, semiconductor surface, separate confinement heterostructure, shallow donors, Si, Si doped GaN, Si doping, Si substrate, Si(111), Si-doping, SiC, SiC substrate, SiC substrates, SiC SURFACE PREPARATION, Silicium, silicon, silicon carbide, silicon substrate, SIMS, SIMS transmission, simulation, single, single crystal substrates, single crystalline ZnGeN2, single crystals, smoothening, solar-blind, solar-blind detector, solid solutions, source, source precursors, spatial resolution, spatially resolved, specific heat, spectroscopic ellipsometry, spectroscopy, spontaneous polarization, Sputter deposition, stability, stacking faults, Stark effect, states, STEM, stimulated emission, STM, strain, strain effect, strain energy, strain relaxation, stress, stress calibration, stretched exponential function, structural characterization, structural properties, structures, sublimation, sublimation method, substrate, substrates, sulphide solution, superlattice, superlattices, surface, surface core level shift, surface damage, Surface etching, surface morphology, surface recombination, surface reconstruction, surface segregation, surface structure, surface structures, surfaces, surfactants, susceptor geometry, switching, symmetry,
T (86 items): Tailored Substrates, TEM, temperature, temperature effect, temperature interlayer, temperature-dependence, templates, ternary, ternary alloy, terrace, tertiarybutylhydrazine, thermal, Thermal annealing, thermal boundary resistance, thermal effects, thermal stability, thermo-mechanical stability, thermodynamic, thermodynamic instability, thermodynamic properties, these keywords will be used to index your paper), thick layers, thickness, thin films, threading dislocations, threshold analysis, Ti/GaN ohmic contacts, tight-binding total energy method, tilt, tilting, time of flight mass spectroscopy of, time resolved spectroscopy, time-resolved, time-resolved photolumiescence, time-resolved photoluminescence, time-resolved photoluminescence ; piezoelectric effect ; spontaneous polarization, titanium nitride, transconductance, transient spectroscopy, Transistor, transitions., transmission, transmission electron microscopy, transparent conductor, transport, transport measurements, transport modeling, Transport properties, treatment, tungsten, tunnel, two-dimensional electron gas, two-electron,
U (11 items): ultraviolet, ultraviolet (UV), ultraviolet lasing, UV, UV detector, UV lasers, UV photo-assisted etching, UV-lasers,
V (10 items): V/III ratio, vacancy, vapor deposition, VCSEL, VCSELs, vibrational spectroscopy, virtual mixed crystal, visible-blind,
W (6 items): W mask, wavelength dispersive x-ray spectrometry, wet etching, wide bandgap nitrides, wide bandgap semiconductors, wurtzite nitrides,
X (24 items): x-ray, X-Ray Diffraction, X-ray diffractometry, X-ray measurements, XPS, XRD,
Y (3 items): yellow band, yellow luminescence,

The keywords used in this indexing have been supplied by the authors.